Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures
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چکیده
منابع مشابه
Influence of High-k Gate Dielectric on Nanoscale DG-MOSFET
Influence of dielectric materials as gate oxide on various short channel device parameters using a 2-D device simulator has been studied in this paper. It is found that the use of high-k dielectrics directly on the silicon wafer would degrade the performance. This degradation is mainly due to the fringing field effect developed from gate to source/drain. This fringing field will further generat...
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15 صفحه اولPerformance Analysis of Double Gate n-FinFET Using High-k Dielectric Materials
To extend the use of CMOS technology beyond 14 nm node technology, new device materials are required that can enhance the performance of MOSFETs. The use of high-k materials in double gate (DG) MOSFET can triumph over the problem of power dissipation and leakage current. In this paper, we investigated various high-k dielectrics as the gate oxides in a 12 nm SOI FinFET and the performance potent...
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ژورنال
عنوان ژورنال: Indonesian Journal of Electrical Engineering and Computer Science
سال: 2019
ISSN: 2502-4760,2502-4752
DOI: 10.11591/ijeecs.v14.i2.pp573-580